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9 March 2022 Sub-mA threshold current quick fabrication VCSELs for characterisation of epitaxial material over 150mm wafers
Jack Baker, Craig P. Allford, Sara Gillgrass, Tomas Peach, Iwan Davies, Samuel Shutts, Peter M. Smowton
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Proceedings Volume PC12020, Vertical-Cavity Surface-Emitting Lasers XXVI; PC1202007 (2022) https://doi.org/10.1117/12.2610179
Event: SPIE OPTO, 2022, San Francisco, California, United States
Abstract
A simplified fabrication process for VCSELs which employs oxidation-vias for definition of the laser aperture and bond pad is applied to a full 150mm wafer as a technique for material characterisation. This Quick Fabrication process produces representative VCSELs, with performance comparable to standard process VCSELs, with threshold currents for 8μm oxide-aperture devices measured between 0.8 and 1.3mA for both device types. The redshift of the lasing wavelength and threshold currents are used for rapid assessment of the VCSEL wafers.
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Jack Baker, Craig P. Allford, Sara Gillgrass, Tomas Peach, Iwan Davies, Samuel Shutts, and Peter M. Smowton "Sub-mA threshold current quick fabrication VCSELs for characterisation of epitaxial material over 150mm wafers", Proc. SPIE PC12020, Vertical-Cavity Surface-Emitting Lasers XXVI, PC1202007 (9 March 2022); https://doi.org/10.1117/12.2610179
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KEYWORDS
Vertical cavity surface emitting lasers
Semiconducting wafers
Measurement devices
Bridges
Oxidation
Oxides
Reflectometry
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