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9 March 2022 Next-generation of III-nitride light emitters based on buried tunnel junction design
Henryk Turski, Mikolaj Chlipala, Marcin Siekacz, Grzegorz Muziol, Mikolaj Zak, Mateusz Hajdel, Krzesimir Nowakowski-Szkudlarek, Len H. van Deurzen, Huili G. Xing, Debdeep Jena, Czeslaw Skierbiszewski
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Proceedings Volume PC12022, Light-Emitting Devices, Materials, and Applications XXVI; PC120220G (2022) https://doi.org/10.1117/12.2608281
Event: SPIE OPTO, 2022, San Francisco, California, United States
Abstract
We present LED profiting from the bottom-tunnel junction (BTJ) construction. The BTJ design aligns the polarization fields in a desired direction in the vicinity of active region and inverts the ordering of the layer stack in the structure. This leads the situation were conductive, n-type layer is on the very top of the structure. Since current spreading in n-type material is much better than in p-type, BTJ-based light emitters open new possibilities in heterostructure design. In this talk we present new light emitting structures grown by plasma-assisted MBE based on BTJ platform and compare prospects for bottom and top tunnel junction devices.
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Henryk Turski, Mikolaj Chlipala, Marcin Siekacz, Grzegorz Muziol, Mikolaj Zak, Mateusz Hajdel, Krzesimir Nowakowski-Szkudlarek, Len H. van Deurzen, Huili G. Xing, Debdeep Jena, and Czeslaw Skierbiszewski "Next-generation of III-nitride light emitters based on buried tunnel junction design", Proc. SPIE PC12022, Light-Emitting Devices, Materials, and Applications XXVI, PC120220G (9 March 2022); https://doi.org/10.1117/12.2608281
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KEYWORDS
Electrons
Gallium nitride
Heterojunctions
Lead
Polarization
Solid state electronics
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