Poster
7 March 2022 Effects of nanowire geometry on light extraction efficiency in nanowire deep-ultraviolet LEDs
Author Affiliations +
Conference Poster
Abstract
AlGaN light emitting diodes (LEDs) emitting in the deep ultraviolet (DUV) range typically suffer from poor light extraction efficiency (LEE). In this study, we determine the effects of nanostructure height, diameter, and emission wavelength on LEE. Changes to device morphology influencing surface to volume ratio (SVR) are studied in order to optimize device dimensions to maximize LEE. Simulations show improvements in LEE of up to 300% and 60% for structures with increased height and decreased diameter respectively, which is predicted for higher SVR structures. These results shows that engineering of nanostructure SVR could be used to improve DUV LED efficiency.
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Matthew Seitz, Bryan Melanson, and Jing Zhang "Effects of nanowire geometry on light extraction efficiency in nanowire deep-ultraviolet LEDs", Proc. SPIE PC12022, Light-Emitting Devices, Materials, and Applications XXVI, PC1202214 (7 March 2022); https://doi.org/10.1117/12.2610017
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KEYWORDS
Deep ultraviolet

Light emitting diodes

Nanowires

Nanostructures

External quantum efficiency

Finite-difference time-domain method

Magnetism

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