Significant improvement of green light emission efficiency of InGaN/GaN quantum wells by oxide thin films

Seiya Kaito; Tetsuya Matsuyama; Kenji Wada; Mitsuru Funato; Yoichi Kawakami; Koichi Okamoto

doi:10.1117/12.2633221

3 October 2022 Significant improvement of green light emission efficiency of InGaN/GaN quantum wells by oxide thin films

Seiya Kaito, Tetsuya Matsuyama, Kenji Wada, Mitsuru Funato, Yoichi Kawakami, Koichi Okamoto

Author Affiliations +

Proceedings Volume PC12197, Plasmonics: Design, Materials, Fabrication, Characterization, and Applications XX; PC121971O (2022) https://doi.org/10.1117/12.2633221
Event: SPIE Nanoscience + Engineering, 2022, San Diego, California, United States

Conference Poster

Abstract

This conference presentation was prepared for the Plasmonics: Design, Materials, Fabrication, Characterization, and Applications XX conference at SPIE Optics + Photonics 2022.

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Seiya Kaito, Tetsuya Matsuyama, Kenji Wada, Mitsuru Funato, Yoichi Kawakami, and Koichi Okamoto "Significant improvement of green light emission efficiency of InGaN/GaN quantum wells by oxide thin films", Proc. SPIE PC12197, Plasmonics: Design, Materials, Fabrication, Characterization, and Applications XX, PC121971O (3 October 2022); https://doi.org/10.1117/12.2633221

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