Flexible nanoscale organic thin-film transistors (Conference Presentation)

Ute Zschieschang; Hagen Klauk

doi:10.1117/12.2633311

3 October 2022 Flexible nanoscale organic thin-film transistors (Conference Presentation)

Ute Zschieschang, Hagen Klauk

Proceedings Volume PC12211, Organic and Hybrid Field-Effect Transistors XXI; PC122110N (2022) https://doi.org/10.1117/12.2633311
Event: SPIE Organic Photonics + Electronics, 2022, San Diego, California, United States

Abstract

Using direct-write electron-beam lithography, low-voltage organic thin-film transistors (TFTs) with channel lengths and the parasitic gate-to-source and gate-to-drain overlaps as small as 100 nm have been fabricated on flexible polymeric substrates. Despite the small channel lengths and gate-to-contact overlaps, these TFTs display good static current-voltage characteristics, including on/off current ratios of nine orders of magnitude, subthreshold swings of about 100 mV/decade, turn-on voltages of 0 V, negligibly small threshold-voltage roll-off, and contact resistances below 1 kOhm-cm.

Conference Presentation

Citation Download Citation

Ute Zschieschang and Hagen Klauk "Flexible nanoscale organic thin-film transistors (Conference Presentation)", Proc. SPIE PC12211, Organic and Hybrid Field-Effect Transistors XXI, PC122110N (3 October 2022); https://doi.org/10.1117/12.2633311

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KEYWORDS

Transistors

Thin films

Indium

Lithography

Polymers

Semiconductors

Silicon

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