The novel Group IV materials system germanium silicon tin (GeSiSn) promises a low-cost material alternative to conventional Group III-V and II-VI materials systems for extended shortwave infrared (SWIR) and even mid-wave and long-wave infrared applications. This materials system offers substantial advantages in terms of material cost, processing cost, and substrate size, allowing for the development of large arrays, with small pixels, at low cost.
Here, we present the device models we have used for our development and an analysis of both individual diodes and a large area detector array, including initial imagery captured using the detector array hybridized to a commercially available readout integrated circuit.
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