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21 March 2023 6.5% external quantum efficiency in V-defect engineered red InGaN LEDs
Jacob Ewing, Cheyenne Lynsky, Feng Wu, Matthew Wong, Michael Iza, James S. Speck, Steven P. DenBaars
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Proceedings Volume PC12421, Gallium Nitride Materials and Devices XVIII; (2023) https://doi.org/10.1117/12.2649296
Event: SPIE OPTO, 2023, San Francisco, California, United States
Abstract
Achieving high quantum efficiency in long-wavelength nitride LEDs has proved challenging due to stress induced from high In%, piezoelectric polarization, and defect generation. A leading technique for increasing the efficiency in long-wavelength InGaN is V-defect engineering which uses naturally occurring pyramidal (10-11) defects to achieve deeper hole injection through lateral pathways on the semi-polar sidewalls of the V-defects. In this work we demonstrate V-defect engineered red LEDs achieving a peak EQE of 6.5% at 600 nm on patterned sapphire. We discuss formation and distribution of V-defects as well as luminescence properties and efficiency of InGaN red LEDs.
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Jacob Ewing, Cheyenne Lynsky, Feng Wu, Matthew Wong, Michael Iza, James S. Speck, and Steven P. DenBaars "6.5% external quantum efficiency in V-defect engineered red InGaN LEDs", Proc. SPIE PC12421, Gallium Nitride Materials and Devices XVIII, (21 March 2023); https://doi.org/10.1117/12.2649296
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KEYWORDS
Light emitting diodes
Indium gallium nitride
External quantum efficiency
Luminescence
Metalorganic chemical vapor deposition
Polarization
Quantum efficiency
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