Carrier localization effects in c-plane (Al,Ga)N quantum wells

Stefan Schulz; Robert Finn

doi:10.1117/12.2646311

21 March 2023 Carrier localization effects in c-plane (Al,Ga)N quantum wells

Stefan Schulz, Robert Finn

Proceedings Volume PC12421, Gallium Nitride Materials and Devices XVIII; (2023) https://doi.org/10.1117/12.2646311
Event: SPIE OPTO, 2023, San Francisco, California, United States

Abstract

Aluminium gallium nitride ((Al,Ga)N) quantum wells have attracted significant interest for optoelectronic device applications in the ultraviolet (UV) spectral range. Here, we present an atomistic theoretical analysis of the impact of random alloy fluctuations on the electronic and optical properties of c-plane (Al,Ga)N/AlN quantum wells. Special attention is paid to the impact of the Al content on the results. Our studies show that already random alloy fluctuations are sufficient to lead to strong carrier localization effects. Furthermore, our calculations reveal that the degree of optical polarization is strongly affected by alloy fluctuations.

Conference Presentation

Citation Download Citation

Stefan Schulz and Robert Finn "Carrier localization effects in c-plane (Al,Ga)N quantum wells", Proc. SPIE PC12421, Gallium Nitride Materials and Devices XVIII, (21 March 2023); https://doi.org/10.1117/12.2646311

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