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21 March 2023 Electrochemical etching for thin-film light-emitters
Åsa Haglund, Filip Hjort, Johannes Enslin, Michael A. Bergmann, Munise Cobet, Giulia Cardinali, Nando Prokop, Lars Persson, Estrella Torres, Martin Guttmann, Luca Sulmoni, Neysha Lobo-Ploch, Tim Kolbe, Joachim Ciers, Tim Wernicke, Michael Kneissl
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Proceedings Volume PC12421, Gallium Nitride Materials and Devices XVIII; (2023) https://doi.org/10.1117/12.2651475
Event: SPIE OPTO, 2023, San Francisco, California, United States
Abstract
Electrochemical etching of III-nitride-materials is a fast-developing research field. This method is used to selectively porosify or completely etch such materials and thereby opens up a new design space for both photonic and electronic devices. Here we will focus on complete lateral electrochemical etching for substrate removal to realise thin-film vertical-cavity surface-emitting lasers (VCSELs) and light emitting diodes (LEDs). Key challenges that will be addressed are how to achieve etched surfaces as smooth as the as-grown material and how to protect fully processed and highly doped device structures such as tunnel junctions, during substrate removal.
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Åsa Haglund, Filip Hjort, Johannes Enslin, Michael A. Bergmann, Munise Cobet, Giulia Cardinali, Nando Prokop, Lars Persson, Estrella Torres, Martin Guttmann, Luca Sulmoni, Neysha Lobo-Ploch, Tim Kolbe, Joachim Ciers, Tim Wernicke, and Michael Kneissl "Electrochemical etching for thin-film light-emitters", Proc. SPIE PC12421, Gallium Nitride Materials and Devices XVIII, (21 March 2023); https://doi.org/10.1117/12.2651475
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KEYWORDS
Electrochemical etching
Thin films
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