Presentation
21 March 2023 Wing tilt in ELO grown GaN
Ronny Kirste, Seiji Mita, Houston Dycus, Jack Almeter, James Tweedie, James Loveless, Pramod Reddy, Ramon Collazo, Zlatko Sitar
Author Affiliations +
Abstract
Epitaxial lateral overgrowth (ELO) of GaN is a well-established technology to reduce the dislocation density of III-Nitride films grown on sapphire. One of the longstanding problems with ELO has been the so-called wing tilt. This wing tilt is a result of a tilt of the GaN crystal in the regions not grown on the SiO2 opening which results in high dislocation densities in the coalescence region of the film. In this study, we demonstrate that wing tilt in ELO is result of the SiO2 used to pattern GaN templates. We show that wing tilt occurs immediately at the start of the ELO growth process. Furthermore, we show that wing tilt can be avoided completely if an etched template is used in combination with facet controlled epitaxial lateral overgrowth (FACELO). Results are based on homoepitaxial GaN growth in combination with TEM, XRD, and PL studies.
Conference Presentation
© (2023) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ronny Kirste, Seiji Mita, Houston Dycus, Jack Almeter, James Tweedie, James Loveless, Pramod Reddy, Ramon Collazo, and Zlatko Sitar "Wing tilt in ELO grown GaN", Proc. SPIE PC12421, Gallium Nitride Materials and Devices XVIII, (21 March 2023); https://doi.org/10.1117/12.2650564
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KEYWORDS
Gallium nitride

Epitaxial lateral overgrowth

Silica

Crystals

Optical lithography

Transmission electron microscopy

Homoepitaxy

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