Presentation
17 March 2023 Color centers in AlN as qubit candidates: point defect management
Ramon Collazo, Pegah Bagheri, Ronny Kirste, Pramod Reddy, Seiji Mita, Zlatko Sitar
Author Affiliations +
Abstract
AlN as an UWBG host for quantum emitters, especially color centers, is expected to address current challenges such as operation at room temperature and scalability of quantum-photonic devices for qubit applications. Significant challenges in the point defect management and existence of multiple defects charge states precludes the use of AlN as a simple practical host for qubits. In this work, a roadmap for the stabilization of Ti-related color centers in AlN for quantum computing applications is presented. The realization of (TiAlVN)0 defects as a candidate for single spin color center requires the control of the Fermi level of AlN via doping, a nitrogen vacancy supersaturation via implantation, and the use of CPC and dQFL control methods to suppress the formation of other defects. This work opens a pathway for the systematic management of color centers with particular charge states in nitrides for quantum computing applications.
Conference Presentation
© (2023) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ramon Collazo, Pegah Bagheri, Ronny Kirste, Pramod Reddy, Seiji Mita, and Zlatko Sitar "Color centers in AlN as qubit candidates: point defect management", Proc. SPIE PC12430, Quantum Sensing and Nano Electronics and Photonics XIX, PC124300Y (17 March 2023); https://doi.org/10.1117/12.2652657
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KEYWORDS
Aluminum nitride

Color centers

Quantum communications

Quantum computing

Annealing

Compound parabolic concentrators

Doping

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