Characterisation of 200 mm GaAs and Ge substrate VCSELs for high-volume manufacturing

Sara-Jayne Gillgrass; Craig P. Allford; Andrew D. Johnson; Jack Baker; Iwan Davies; Samuel Shutts; Peter M. Smowton

doi:10.1117/12.2648442

17 March 2023 Characterisation of 200 mm GaAs and Ge substrate VCSELs for high-volume manufacturing

Sara-Jayne Gillgrass, Craig P. Allford, Andrew D. Johnson, Jack Baker, Iwan Davies, Samuel Shutts, Peter M. Smowton

Proceedings Volume PC12439, Vertical-Cavity Surface-Emitting Lasers XXVII; PC124390B (2023) https://doi.org/10.1117/12.2648442
Event: SPIE OPTO, 2023, San Francisco, California, United States

Abstract

Emerging consumer applications of VCSEL arrays demand larger sizes and improved reliability. Significant wafer bow seen on a 150-mm GaAs-substrate wafer can impact fabrication, characterisation, and yields. It has been reported that Ge-substrates are drop-in replacements for GaAs, but also have additional benefits. We report on the spatial performance of identical 940 nm VCSELs, grown on both types of 200-mm substrate. Threshold current densities vary by 0.1μA/cm2 at the wafer centre, and a 0.78% and 0.59% decrease in centre-to-edge emission wavelengths for Ge and GaAs respectively. Results show a potential route to larger manufacturing volumes with lower costs per wafer.

Conference Presentation

Citation Download Citation

Sara-Jayne Gillgrass, Craig P. Allford, Andrew D. Johnson, Jack Baker, Iwan Davies, Samuel Shutts, and Peter M. Smowton "Characterisation of 200 mm GaAs and Ge substrate VCSELs for high-volume manufacturing", Proc. SPIE PC12439, Vertical-Cavity Surface-Emitting Lasers XXVII, PC124390B (17 March 2023); https://doi.org/10.1117/12.2648442

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