Evaluation of 1.3-μm-region emitting InAs QD edge-emitting lasers over 150-mm substrates

Sara-Jayne Gillgrass; Craig P. Allford; Mukul Debnath; Andrew Clark; Peter M. Smowton

doi:10.1117/12.2646136

17 March 2023 Evaluation of 1.3-μm-region emitting InAs QD edge-emitting lasers over 150-mm substrates

Sara-Jayne Gillgrass, Craig P. Allford, Mukul Debnath, Andrew Clark, Peter M. Smowton

Proceedings Volume PC12440, Novel In-Plane Semiconductor Lasers XXII; PC1244002 (2023) https://doi.org/10.1117/12.2646136
Event: SPIE OPTO, 2023, San Francisco, California, United States

Abstract

InAs QD lasers emitting in the 1.3-μm-region have suitable device properties important for integrated applications and growth on silicon. Sensing applications have encouraged further development of these wavelengths for high-volume-manufacturing. Assessment of epitaxial wafers is demonstrated here by fabrication of oxide isolated broad-area edge-emitting-lasers and on-wafer characterization of 150-mm p-doped InAs QD wafers grown via MBE. We report on spatial variations through Power-Current-Voltage-Wavelength measurements with Jth of EELs calculated using current spreading structures. A 9 nm decrease in center-to-edge emission wavelengths is observed for 2mm devices, with a threshold current density variation of approximately 0.63 kA/cm² for a particular epitaxial design.

Conference Presentation

Citation Download Citation

Sara-Jayne Gillgrass, Craig P. Allford, Mukul Debnath, Andrew Clark, and Peter M. Smowton "Evaluation of 1.3-μm-region emitting InAs QD edge-emitting lasers over 150-mm substrates", Proc. SPIE PC12440, Novel In-Plane Semiconductor Lasers XXII, PC1244002 (17 March 2023); https://doi.org/10.1117/12.2646136

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