Presentation
5 October 2023 Hexagonal boron nitride based deep ultraviolet light emitter
Author Affiliations +
Abstract
Hexagonal boron nitride (hBN) is a two-dimensional van der Waals material and is composed of boron and nitrogen atoms in a hexagonal lattice. hBN is the wide-bandgap semiconductor with a band of 6.4 eV and shows efficient band edge cathodoluminescence at 215 nm as well as lasing behavior. Here I will present the efficient DUV electroluminescence (EL) in band edge emission at 215 nm as well as broad 303-333 nm emission peaks from hBN van der Waals heterostructure. We observed that 303-333 nm broad emissions with phonon replica of optical phonon energy of hBN based on the Franck-Condon principle, which are attributed to the electric field induced color centers and its highly localized excitons features. These results demonstrate the promising developments of a highly efficient solid-state DUV light source at the nanoscale and allow the development of the key architectures for DUV nanophotonic, bio-sensing, high-precision metrology, and quantum information.
Conference Presentation
© (2023) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Young Duck Kim "Hexagonal boron nitride based deep ultraviolet light emitter", Proc. SPIE PC12652, UV and Higher Energy Photonics: From Materials to Applications 2023, PC1265209 (5 October 2023); https://doi.org/10.1117/12.2677312
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KEYWORDS
Deep ultraviolet

Boron nitride

Quantum emitters

Electroluminescence

Phonons

Quantum light sources

Quantum measurement

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