Organic dry development rinse (O-DDR) process for MOR patterning toward high-NA EUV

Satoshi Takeda; Wataru Shibayama; Kodai Kato; Shuhei Shigaki; Yuki Furukawa; Taiki Saijo; Makoto Nakajima; Rikimaru Sakamoto

doi:10.1117/12.2684973

22 November 2023 Organic dry development rinse (O-DDR) process for MOR patterning toward high-NA EUV

Satoshi Takeda, Wataru Shibayama, Kodai Kato, Shuhei Shigaki, Yuki Furukawa, Taiki Saijo, Makoto Nakajima, Rikimaru Sakamoto

Author Affiliations +

Proceedings Volume PC12750, International Conference on Extreme Ultraviolet Lithography 2023; PC1275006 (2023) https://doi.org/10.1117/12.2684973
Event: SPIE Photomask Technology + EUV Lithography, 2023, Monterey, California, United States

Abstract

Metal Oxide Resist (MOR) is one of the promising resists for High-NA EUV lithography. However since the pattern pitch is getting smaller, pattern collapse issue has been getting sever problem. We newly developed Organic Dry Development Rinse (O-DDR) process as extension for wet development to prevent the pattern collapse issue without using any special equipment. This process has been demonstrated the capability to prevent MOR pattern collapse and expand process window at P28 L/S and P32 pillar. In this paper, we introduce O-DDR process concept and performance for MOR patterning.

Conference Presentation

Citation Download Citation

Satoshi Takeda, Wataru Shibayama, Kodai Kato, Shuhei Shigaki, Yuki Furukawa, Taiki Saijo, Makoto Nakajima, and Rikimaru Sakamoto "Organic dry development rinse (O-DDR) process for MOR patterning toward high-NA EUV", Proc. SPIE PC12750, International Conference on Extreme Ultraviolet Lithography 2023, PC1275006 (22 November 2023); https://doi.org/10.1117/12.2684973

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