High-resolution silicon pore x-ray optics

Boris Landgraf; Nicolas Barrière; Alex Bayerle; Maximilien Collon; David Girou; Laurens Keek; Adam Lassise; Giuseppe Vacanti; Aniket Thete; Ramses Gunther; Christian Koernig; Mark Vervest; Luc Voruz

doi:10.1117/12.2687643

22 November 2023 High-resolution silicon pore x-ray optics

Boris Landgraf, Nicolas Barrière, Alex Bayerle, Maximilien Collon, David Girou, Laurens Keek, Adam Lassise, Giuseppe Vacanti, Aniket Thete, Ramses Gunther, Christian Koernig, Mark Vervest, Luc Voruz

Author Affiliations +

Proceedings Volume PC12750, International Conference on Extreme Ultraviolet Lithography 2023; PC127500W (2023) https://doi.org/10.1117/12.2687643
Event: SPIE Photomask Technology + EUV Lithography, 2023, Monterey, California, United States

Conference Poster

Abstract

Silicon pore optics (SPO) is a novel approach, which has been developed for the European Space Agency X-ray observatory Athena, to achieve high-performance X-ray mirrors at low cost and relatively short lead time. The light-weight optics are manufactured from silicon wafers using mass production semiconductor technology as well as custom fully automated robotic assembly systems. A fully automated 300 mm IBF machine is used to further improve the optics by correcting thickness inhomogeneities, achieve specific global gradients and reduce the initial surface roughness of the wafers. SPO is a versatile technology, as the design of the mirror plates can be optimized for various applications. Different optical designs such as Wolter, Kirkpatrick–Baez, Laue and X-ray interferometry can be realized for the low-energy X-ray to gamma-ray energy range.

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Boris Landgraf, Nicolas Barrière, Alex Bayerle, Maximilien Collon, David Girou, Laurens Keek, Adam Lassise, Giuseppe Vacanti, Aniket Thete, Ramses Gunther, Christian Koernig, Mark Vervest, and Luc Voruz "High-resolution silicon pore x-ray optics", Proc. SPIE PC12750, International Conference on Extreme Ultraviolet Lithography 2023, PC127500W (22 November 2023); https://doi.org/10.1117/12.2687643

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