Mask registration for high-NA EUV lithography

Roman Schmeissner; Susanne Toepfer; Mikhail Poretskiy; Sven Martin; Stephan Zschaeck; Martin Steinhardt; Vivek Mishra; Cindy Zheng; Kowtilya Bijjula; Malahat Tavassoli

doi:10.1117/12.2688259

12 January 2024 Mask registration for high-NA EUV lithography

Roman Schmeissner, Susanne Toepfer, Mikhail Poretskiy, Sven Martin, Stephan Zschaeck, Martin Steinhardt, Vivek Mishra, Cindy Zheng, Kowtilya Bijjula, Malahat Tavassoli

Author Affiliations +

Proceedings Volume PC12751, Photomask Technology 2023; PC1275104 (2024) https://doi.org/10.1117/12.2688259
Event: SPIE Photomask Technology + EUV Lithography, 2023, Monterey, California, United States

Abstract

The increasingly tight overlay requirements to support high-NA EUV lithography are driving specifications for mask metrology tools. Precise and accurate mask registration measurements with optical proximity corrections are challenging but essential to enable scanner on-product overlay requirements. To achieve this, it is necessary to improve registration tool capability to enable resolution and highly repeatable measurements of small features. Close cooperation between equipment vendors and mask shops is required to keep pace with those requirements. The latest generation of the Carl Zeiss registration tool PROVE® neXT provides an illumination wavelength of 193 nm and a numerical aperture of 0.8 to provide inherent repeatability and resolution advantages on smaller features. The present paper reports the performance of a fleet of PROVE® neXT tools. The readiness to meet the requirements of upcoming technology nodes, notably high – NA EUV lithography, is reviewed. Related application cases are discussed from a mask shop point of view.

Conference Presentation

Citation Download Citation

Roman Schmeissner, Susanne Toepfer, Mikhail Poretskiy, Sven Martin, Stephan Zschaeck, Martin Steinhardt, Vivek Mishra, Cindy Zheng, Kowtilya Bijjula, and Malahat Tavassoli "Mask registration for high-NA EUV lithography", Proc. SPIE PC12751, Photomask Technology 2023, PC1275104 (12 January 2024); https://doi.org/10.1117/12.2688259

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