Research activities on EUV mask at NewSUBARU synchrotron light facility for the advanced EUV lithography

Takeo Watanabe; Tetsuo Harada; Shinji Yamakawa

doi:10.1117/12.2687002

22 November 2023 Research activities on EUV mask at NewSUBARU synchrotron light facility for the advanced EUV lithography

Takeo Watanabe, Tetsuo Harada, Shinji Yamakawa

Author Affiliations +

Proceedings Volume PC12751, Photomask Technology 2023; PC127510N (2023) https://doi.org/10.1117/12.2687002
Event: SPIE Photomask Technology + EUV Lithography, 2023, Monterey, California, United States

Abstract

The program of the research and development (R&D) on the EUV lithography has begun at the Laboratory of Advanced Science and Technology for Industry, Himeji Institute Technology (HIT) (present University of Hyogo) using the NewSUBARU synchrotron light source since 1996. For the evaluation of EUV masks, it was prepared that 1) the in-band reflectometer, 2) the bright field EUV microscope for the defect inspection of EUV masks, and 3) the EUV coherent scatterometry microscope for the defect characterization of EUV masks. In addition, the large reflectometer for the measurement of a large collector mirror for the EUV-laser-produced-plasma light source was installed at the BL10B beamline. Recently, it is prepared that 1) the OoB reflectometer for the EUV mask evaluation at BL03, and 2) the EUV irradiation tools in hydrogen atmosphere up to 70 Pa and EUV power up to 30W/cm2 on a sample to evaluate the radiation hardness of the materials which is used for the EUV masks and pellicles at BL09.

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Takeo Watanabe, Tetsuo Harada, and Shinji Yamakawa "Research activities on EUV mask at NewSUBARU synchrotron light facility for the advanced EUV lithography", Proc. SPIE PC12751, Photomask Technology 2023, PC127510N (22 November 2023); https://doi.org/10.1117/12.2687002

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KEYWORDS

Extreme ultraviolet

Extreme ultraviolet lithography

Synchrotrons

Reflectometry

Imaging systems

Industry

Light sources

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