Presentation
12 March 2024 Development of GaAs anti-parallel Schottky barrier diode for 300 GHz subharmonic mixer
Dong Woo Park, Young-Ho Kim, Jun-Hwan Shin, Da-Hye Choi, Eui Su Lee, Il-Min Lee, Kyung Hyun Park
Author Affiliations +
Abstract
In this study, we designed and fabricated GaAs AP-SBDs for a 300 GHz subharmonic mixer. To enhance the reliability of electromagnetic simulations, we measured and calculated the optical parameters of the material in the terahertz range and designed a component with minimal impedance variation across the frequency range of 140-300 GHz. GaAs AP-SBDs were fabricated using MOCVD and an i-line stepper, followed by electrical characterization. Finally, a subharmonic mixer was constructed using WR3.4/WR6.5 waveguides, achieving an single side band conversion loss of 9.72 dB and a 3 dB bandwidth of 40 GHz.
Conference Presentation
© (2024) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Dong Woo Park, Young-Ho Kim, Jun-Hwan Shin, Da-Hye Choi, Eui Su Lee, Il-Min Lee, and Kyung Hyun Park "Development of GaAs anti-parallel Schottky barrier diode for 300 GHz subharmonic mixer", Proc. SPIE PC12885, Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications XVII, PC128850A (12 March 2024); https://doi.org/10.1117/12.3001328
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KEYWORDS
Gallium arsenide

Diodes

Data communications

Electromagnetic simulation

Metalorganic chemical vapor deposition

Reliability

RF communications

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