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9 March 2024 Strain relaxation versus luminescence in (0001) InGaN/GaN quantum wells for emission beyond the green range
Magali Morales, Pierre Ruterana, Marie-Pierre Chauvat, Benjamin Damilano, Bernard Gil
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Proceedings Volume PC12886, Gallium Nitride Materials and Devices XIX; PC128860D (2024) https://doi.org/10.1117/12.3000165
Event: SPIE OPTO, 2024, San Francisco, California, United States
Abstract
In this work, strain relaxation in green-red emitting InGaN/GaN quantum well (QW) structures are investigated by transmission electron microscopy. In these structures, high indium content QW strain relaxation takes place through hexagonal domains formation inside GaN barrier just on QW top. With In increases, domains become limited by I1 stacking faults (SF) which can terminate by Frank partial dislocations at the junction when folding to prismatic planes. Closed domain defects two configurations are observed with rotated or parallel I1 basal SF. Two possible origins of a-type threading dislocations emanating from such defects and propagating to free surface, are then identified.
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Magali Morales, Pierre Ruterana, Marie-Pierre Chauvat, Benjamin Damilano, and Bernard Gil "Strain relaxation versus luminescence in (0001) InGaN/GaN quantum wells for emission beyond the green range", Proc. SPIE PC12886, Gallium Nitride Materials and Devices XIX, PC128860D (9 March 2024); https://doi.org/10.1117/12.3000165
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KEYWORDS
Quantum wells
Indium
Luminescence
Quenching
Transmission electron microscopy
Optoelectronic devices
Quantum emitters
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