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9 March 2024 Polarization-induced doping in vertical AlGaN transistors
Bernd Witzigmann, Samuel Faber, Rany Miranti-Augustin, Friedhard Römer, Christoph Margenfeld, Andreas Waag
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Proceedings Volume PC12886, Gallium Nitride Materials and Devices XIX; PC128860L (2024) https://doi.org/10.1117/12.3002362
Event: SPIE OPTO, 2024, San Francisco, California, United States
Abstract
Aluminum nitride (AlN) exhibits large breakdown electric fields and high thermal conductivity which allows for excellent miniaturization and power density in high-power electronics. In this talk, we investigate normally-off vertical n-channel trench MISFETs, with the channel consisting of nominally undoped graded AlGaN. The graded AlGaN layer creates immobile volume charges, and the lack of impurities reduces impurity scattering. The n-doped drift layer is composed of AlN for optimum electric field management. Contacts are placed on AlGaN for low ohmic resistance. Using TCAD simulations, the physics of device operation is studied. For comparison, a conventional impurity-doped FET without PID is taken as reference device. The simulations encompass calculation of local strain, solution of the Poisson-equation and electron and hole continuity equation on a 2-dimensional cross-section of the device. Transfer characteristics, threshold voltage, on-resistance and electric field are discussed. Surface states and interface charges at the nonpolar trench sidewall are included in the study. Finally, technological implementation and experimental results are discussed.
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Bernd Witzigmann, Samuel Faber, Rany Miranti-Augustin, Friedhard Römer, Christoph Margenfeld, and Andreas Waag "Polarization-induced doping in vertical AlGaN transistors", Proc. SPIE PC12886, Gallium Nitride Materials and Devices XIX, PC128860L (9 March 2024); https://doi.org/10.1117/12.3002362
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KEYWORDS
Aluminum gallium nitride
Doping
Transistors
Aluminum nitride
Electric fields
Interfaces
Polarization
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