Continuous-wave operation of GaN-based laser diodes using defect-free epitaxial lateral overgrown GaN on Si substrates

Kentaro Murakawa; Yoshinobu Kawaguchi; Motohisa Usagawa; Yuichiro Tanabe; Yuuta Aoki; Takeshi Yokoyama; Mizuki Tonomura; Kazuma Takeuchi; Takeshi Kamikawa

doi:10.1117/12.3022755

9 March 2024 Continuous-wave operation of GaN-based laser diodes using defect-free epitaxial lateral overgrown GaN on Si substrates

Kentaro Murakawa, Yoshinobu Kawaguchi, Motohisa Usagawa, Yuichiro Tanabe, Yuuta Aoki, Takeshi Yokoyama, Mizuki Tonomura, Kazuma Takeuchi, Takeshi Kamikawa

Author Affiliations +

Proceedings Volume PC12886, Gallium Nitride Materials and Devices XIX; PC128860S (2024) https://doi.org/10.1117/12.3022755
Event: SPIE OPTO, 2024, San Francisco, California, United States

Abstract

As underlayer substrates for laser diodes (LDs), two types of GaN with different carbon concentration grown by the epitaxial lateral overgrowth (ELO) method on Si substrates were investigated. In the sample with lower carbon concentration, many line defects were observed in the wing region, whereas in the sample with higher carbon concentration, such defects were not observed. Analysis by Raman spectroscopy and XRD revealed that the tensile stress applied to GaN decreased in the sample with higher carbon concentration, which is thought to be the reason for suppression of defects. The threshold current density was significantly improved operation by using the stress-relaxed template with no defects, and CW lasing was successfully achieved with a threshold current density of 5.6 kA/cm2. Both in terms of performance and cost, we believe that this short cavity LDs created from Si substrate is suitable for mobile applications such as augmented-reality glasses.

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Kentaro Murakawa, Yoshinobu Kawaguchi, Motohisa Usagawa, Yuichiro Tanabe, Yuuta Aoki, Takeshi Yokoyama, Mizuki Tonomura, Kazuma Takeuchi, and Takeshi Kamikawa "Continuous-wave operation of GaN-based laser diodes using defect-free epitaxial lateral overgrown GaN on Si substrates", Proc. SPIE PC12886, Gallium Nitride Materials and Devices XIX, PC128860S (9 March 2024); https://doi.org/10.1117/12.3022755

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