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9 March 2024 Fabrication method of GaN-air channels for embedded photonic structures
Marta Sawicka, Greg Muziol, Oliwia Golyga, Natalia Fiuczek, Anna Feduniewicz-Zmuda, Marcin Siekacz, Henryk Turski, Kacper Sierakowski, Tomasz Sochacki, Mateusz Słowikowski, Igor Prozheev, Filip Tuomisto, Czeslaw Skierbiszewski
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Proceedings Volume PC12886, Gallium Nitride Materials and Devices XIX; PC128860X (2024) https://doi.org/10.1117/12.3001341
Event: SPIE OPTO, 2024, San Francisco, California, United States
Abstract
We present a method of in-plane modification of the refractive index using ion implantation and electrochemical etching of GaN layers. Proposed method allows for the fabrication of embedded air-GaN channels that can be periodically arranged inside III-nitride heterostructures. Importantly, a flat top surface is preserved for further regrowth. High refractive index contrast between air and GaN makes the proposed technology attractive for the fabrication of embedded photonic structures such as diffraction gratings for distributed feedback laser diodes (DFB LDs). We discuss the impact of the different design of air-GaN channels on the properties of DFB LDs.
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Marta Sawicka, Greg Muziol, Oliwia Golyga, Natalia Fiuczek, Anna Feduniewicz-Zmuda, Marcin Siekacz, Henryk Turski, Kacper Sierakowski, Tomasz Sochacki, Mateusz Słowikowski, Igor Prozheev, Filip Tuomisto, and Czeslaw Skierbiszewski "Fabrication method of GaN-air channels for embedded photonic structures", Proc. SPIE PC12886, Gallium Nitride Materials and Devices XIX, PC128860X (9 March 2024); https://doi.org/10.1117/12.3001341
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KEYWORDS
Fabrication
Diffraction gratings
Electrochemical etching
Refractive index
Annealing
Gallium nitride
Ion channels
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