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9 March 2024 Native InGaN RGB: Empowering display applications with full color microLEDs
Tongtong Zhu
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Proceedings Volume PC12886, Gallium Nitride Materials and Devices XIX; PC1288612 (2024) https://doi.org/10.1117/12.3003668
Event: SPIE OPTO, 2024, San Francisco, California, United States
Abstract
Porotech's unique gallium nitride (GaN) material engineering and production technique enables the world's first commercial native red LED epiwafer for micro-LED applications. Micro-LED technology offers significant brightness, efficiency, and image definition improvements, crucial for AR and head-mounted displays. Traditional red LEDs faced efficiency challenges due to small device size. Porotech's unique porous GaN semiconductor material extends InGaN LED emission range, meeting red display needs, and scaling for micro-LED technology. This breakthrough enables highly efficient full-color micro-LED displays for large area displays, mobile phones, smartwatches, and more. Positioned for success, Porotech drives micro-LED technology and redefines display possibilities.
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Tongtong Zhu "Native InGaN RGB: Empowering display applications with full color microLEDs", Proc. SPIE PC12886, Gallium Nitride Materials and Devices XIX, PC1288612 (9 March 2024); https://doi.org/10.1117/12.3003668
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KEYWORDS
Indium gallium nitride
RGB color model
Industrial applications
Light emitting diodes
Etching
Industry
Manufacturing
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