Recent progress of AlGaN based UVC detectors

Ronny Kirste; Pramod Reddy; Ramon Collazo; Zlatko Sitar

doi:10.1117/12.3003035

9 March 2024 Recent progress of AlGaN based UVC detectors

Ronny Kirste, Pramod Reddy, Ramon Collazo, Zlatko Sitar

Proceedings Volume PC12886, Gallium Nitride Materials and Devices XIX; PC1288616 (2024) https://doi.org/10.1117/12.3003035
Event: SPIE OPTO, 2024, San Francisco, California, United States

Abstract

Recent progress on the development of AlGaN based UVC detectors is discussed. This includes growth, fabrication, and characterization of AlGaN based devices grown on AlN substrates. Special focus is put on the impact of the growth condition and impurity concentration of the epitaxial layers on the dark current. Overall, it is shown AlGaN based detectors have a sensitivity in the range of 130–270 nm while rejecting solar emission. If operated as an Avalanche photodiode (APD), these detectors have an exceptional high linear gain of 300,000 and quantum efficiency <70%. Finally, the potential for 1D and 2D arrays is discussed.

Conference Presentation

Citation Download Citation

Ronny Kirste, Pramod Reddy, Ramon Collazo, and Zlatko Sitar "Recent progress of AlGaN based UVC detectors", Proc. SPIE PC12886, Gallium Nitride Materials and Devices XIX, PC1288616 (9 March 2024); https://doi.org/10.1117/12.3003035

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