Influence of InGaN underlayer on efficiency of LEDs grown by plasma-assisted molecular beam epitaxy

Greg Muziol; Mateusz Hajdel; Marcin Siekacz; Mikolaj Zak; Krzysztof Golyga; Anna Feduniewicz-Zmuda; Henryk Turski; Czeslaw Skierbiszewski

doi:10.1117/12.3002699

9 March 2024 Influence of InGaN underlayer on efficiency of LEDs grown by plasma-assisted molecular beam epitaxy

Greg Muziol, Mateusz Hajdel, Marcin Siekacz, Mikolaj Zak, Krzysztof Golyga, Anna Feduniewicz-Zmuda, Henryk Turski, Czeslaw Skierbiszewski

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Proceedings Volume PC12886, Gallium Nitride Materials and Devices XIX; PC1288619 (2024) https://doi.org/10.1117/12.3002699
Event: SPIE OPTO, 2024, San Francisco, California, United States

Abstract

In this paper we will study the influence of InGaN underlayer on efficiency of InGaN-based LEDs grown by plasma-assisted molecular beam epitaxy (PAMBE). We observed that LEDs with the thinnest underlayer have the highest efficiency. This finding agrees with the theory that the defects, which are buried in standard LEDs are in fact generated during the growth of GaN in MOVPE at high temperature. In case of PAMBE, the growth temperature of GaN is 300°C lower, and these defects are not generated in the first place and there is no need for an InGaN underlayer.

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Greg Muziol, Mateusz Hajdel, Marcin Siekacz, Mikolaj Zak, Krzysztof Golyga, Anna Feduniewicz-Zmuda, Henryk Turski, and Czeslaw Skierbiszewski "Influence of InGaN underlayer on efficiency of LEDs grown by plasma-assisted molecular beam epitaxy", Proc. SPIE PC12886, Gallium Nitride Materials and Devices XIX, PC1288619 (9 March 2024); https://doi.org/10.1117/12.3002699

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