Presentation
13 March 2024 High gain erbium doped aluminium oxide waveguide amplifiers integrated with silicon nitride circuits in a multi-layer platform
Author Affiliations +
Abstract
Reactive sputtering provides a scalable and robust approach to fabricate erbium doped waveguide amplifiers and can be used to integrate devices with other waveguide platforms. In this work, we present recent results on high gain (>25 dB) in Al2O3:Er3+ amplifiers fabricated via reactive sputtering, which are vertically integrated with underlying LioniX TriPleX Si3N4 circuitry.
Conference Presentation
© (2024) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Dawson B. Bonneville, Carlos E. Osornio-Martínez, Ivo Hegeman, Meindert Dijkstra, and Sonia M. García-Blanco "High gain erbium doped aluminium oxide waveguide amplifiers integrated with silicon nitride circuits in a multi-layer platform", Proc. SPIE PC12889, Integrated Optics: Devices, Materials, and Technologies XXVIII, PC1288906 (13 March 2024); https://doi.org/10.1117/12.3004710
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KEYWORDS
Waveguides

Aluminum oxide

Erbium

Silicon nitride

Ions

Quantum photonics

Silicon

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