Cutting-edge single wafer MOCVD technology enabling advanced nitride applications with high performance

Soo Min Lee; Bumjoon Kim; Randhir Bubber; Ming Pan; Michael Coco; Rudy Parekh; Drew Hanser

doi:10.1117/12.3003504

13 March 2024 Cutting-edge single wafer MOCVD technology enabling advanced nitride applications with high performance

Soo Min Lee, Bumjoon Kim, Randhir Bubber, Ming Pan, Michael Coco, Rudy Parekh, Drew Hanser

Proceedings Volume PC12906, Light-Emitting Devices, Materials, and Applications XXVIII; PC1290604 (2024) https://doi.org/10.1117/12.3003504
Event: SPIE OPTO, 2024, San Francisco, California, United States

Abstract

MOCVD technology has widely grown compound semiconductors for various applications, like Power/RF GaN and micro-LEDs. Precise control of wafer uniformity, defect density, and run-to-run consistency is essential for optimal results and reducing COO. High-speed rotation vertical reactors, with uniform deposition capabilities, enable a wide process window. Implementing these in a single wafer configuration enhances film uniformity through concentric temperature and flow patterns. The Propel® MOCVD 300mm single wafer reactor made 300mm semiconductor fabrication accessible to the nitride material system, critical for RF and micro-LEDs. This presentation covers latest Propel® 300mm MOCVD single wafer reactor advancements, including uniformity, repeatability, crystal quality for GaN/Si, GaN HEMT structure characterization, and GaN on Si LED wavelength uniformity. We'll discuss recent progress in red InGaN LED performance on 6” sapphire and 8” Si wafers, highlighting how Propel® MOCVD enhances high indium composition materials with Turbodisc® single wafer reactor technology.

Conference Presentation

Citation Download Citation

Soo Min Lee, Bumjoon Kim, Randhir Bubber, Ming Pan, Michael Coco, Rudy Parekh, and Drew Hanser "Cutting-edge single wafer MOCVD technology enabling advanced nitride applications with high performance", Proc. SPIE PC12906, Light-Emitting Devices, Materials, and Applications XXVIII, PC1290604 (13 March 2024); https://doi.org/10.1117/12.3003504

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