Plasma dynamics and future of LPP-EUV source for semiconductor manufacturing II

Hakaru Mizoguchi; Kentaro Toita Tomita; Masaharu Shiratani; Daisuke Nakamura; Yukihiro Yamagata; Takeshi Higashiguchi; Atsushi Sunahara

doi:10.1117/12.3010018

10 April 2024 Plasma dynamics and future of LPP-EUV source for semiconductor manufacturing II

Hakaru Mizoguchi, Kentaro Toita Tomita, Masaharu Shiratani, Daisuke Nakamura, Yukihiro Yamagata, Takeshi Higashiguchi, Atsushi Sunahara

Author Affiliations +

Proceedings Volume PC12953, Optical and EUV Nanolithography XXXVII; PC129530Q (2024) https://doi.org/10.1117/12.3010018
Event: SPIE Advanced Lithography + Patterning, 2024, San Jose, California, United States

Abstract

Recently progress of LPP EUV light source is remarkable. Ten years ago, power level is only several 10 W level. At present 250W power level is realized in semiconductor mass production factories1) by ASML. On the other hand, pioneer of this Unique technologies including; combination of pulsed CO2 laser and Sn droplets, dual wavelength pico second laser pulses for shooting and debris mitigation by magnetic field have been applied by Gigaphoton2). They have demonstrated high average power >300W EUV power with CO2 laser more than 27kW at output power in cooperation with Gigaphoton and Mitsubishi Electric3). In near future more higher power (>600W) EUV source is required to fit High NA (>0.55) lithography of semiconductor industry. In this paper we will discuss about the Sn plasma dynamics which dominate the EUV emission by using Tomson scattering (TS) measurement4. Recent TS results have revealed whole profiles of electron temperature and ion density in the EUV sources. These results mention that there is still sufficient potential to increase EUV output power and conversion efficiency in near future.

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Hakaru Mizoguchi, Kentaro Toita Tomita, Masaharu Shiratani, Daisuke Nakamura, Yukihiro Yamagata, Takeshi Higashiguchi, and Atsushi Sunahara "Plasma dynamics and future of LPP-EUV source for semiconductor manufacturing II", Proc. SPIE PC12953, Optical and EUV Nanolithography XXXVII, PC129530Q (10 April 2024); https://doi.org/10.1117/12.3010018

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