Presentation
10 April 2024 DSA materials and processes development for ≤ P24 EUV resist L/S pattern rectification
Eungnak Han, Gurpreet Singh, Tayseer Mahdi, Robert Seidel, Sandra Murcia, Lauren Doyle, Nityan Nair, Nafees Kabir, Sean Pursel, David Shykind, Todd Hoppe, Florian Gstrein
Author Affiliations +
Abstract
We present a comprehensive investigation into DSA materials and process development for P24 EUV lithography with the objective of mitigating DSA defects and enhancing the smoothness of DSA-defined patterns. We conduct a comparative assessment of the quality of DSA-rectified patterns between PS-b-PMMA and high Chi BCP. Furthermore, we explore resist planforms other than CAR for creating DSA guiding patterns.
Conference Presentation
© (2024) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Eungnak Han, Gurpreet Singh, Tayseer Mahdi, Robert Seidel, Sandra Murcia, Lauren Doyle, Nityan Nair, Nafees Kabir, Sean Pursel, David Shykind, Todd Hoppe, and Florian Gstrein "DSA materials and processes development for ≤ P24 EUV resist L/S pattern rectification", Proc. SPIE PC12956, Novel Patterning Technologies 2024, PC129560P (10 April 2024); https://doi.org/10.1117/12.3012612
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KEYWORDS
Directed self assembly

Extreme ultraviolet

Materials processing

Block copolymers

Extreme ultraviolet lithography

Fabrication

Objectives

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