Access to eBooks is limited to institutions that have purchased
or currently subscribe to the SPIE eBooks program. eBooks are not
available via an individual subscription. SPIE books (print and
digital) may be purchased individually on
Contact your librarian to recommend SPIE eBooks for your organization.
Chapter 3: High-k, Metal-Gate FinFET CMOS Manufacturing Process
In the so-called “good old days,” the IC technology-node scaling of each generation always brought both higher device density and better device performance. When CMOS IC developed from the 90-nm to 65-nm node, the scaling did not improve the device performance: it only increased the device density. The main reason for this change is the thickness of the gate oxide can no longer be scaled down due to the leakage caused by the tunneling effect.
Online access to SPIE eBooks is limited to subscribing institutions.