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At present, III-V antimonide-based detector technology is under strong development as a possible alternative to HgCdTe detector material. The ability to tune the positions of the conduction and valence band edges independently in a broken-gap T2SL is especially helpful in the design of unipolar barriers. Unipolar barriers are used for implementing the barrier detector architecture for increasing the collection efficiency of photogenerated carriers and reducing dark current originating within the depletion region without inhibiting photo-current flow. During the last decade, antimonide-based FPA technology has achieved a performance level close to that of HgCdTe. The apparent rapid success of the T2SL depends not only on the previous five decades of III-V materials, but mainly on innovative ideas recently emerging in the design of infrared photodetectors. However, a modern version of the technology is still in its infancy. The advent of bandgap engineering has given III-Vs a new lease on life.
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