High-Power EUV Source by Gigaphoton for High-Volume Manufacturing
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Abstract
Extreme ultraviolet (EUV) light sources have been developed together with scanning exposure tools. A 10-W EUV light source tool was shipped by ASML as an a-demo tool in 2007 and by Nikon as EUV-1 in 2008. ASML then developed a b-tool: the NXE-3100 at the beginning of 2011 with a 100-W EUV light source. Requirements of the EUV exposure tool are now represented by the g-tool: the NXE3300 [for high-volume manufacturing (HVM)]. Several machines have been already shipped since 2013. The required EUV power is 250 W of clean power [after purifying infrared (IR) and deep-ultraviolet (DUV) spectra] at intermediate focus (IF) for the current generation of EUVL scanners, and this requirement is expected to rise to 500 W for the next generation of EUVL scanners.6 The current demonstrated power level is 250 W. In this chapter, we present the latest results of EUV sources having more than 100-W EUV power, as well as the design of a 250-W EUV source produced by Gigaphoton and the progress in its development for semiconductor HVM.
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KEYWORDS
Gas lasers

Extreme ultraviolet

Carbon monoxide

Tin

Extreme ultraviolet lithography

Oscillators

Plasma

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