Abstract
One of the advantages of the silicon substrate over other semiconductor substrates is the high-temperature processing capability of silicon. Silicon wafer processing involves many high-temperature procedures (700 to 1200 °C). This chapter covers these high-temperature thermal processes, including diffusion, oxidation, deposition, and annealing, in both standard furnace and rapid thermal processing.
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KEYWORDS
Silicon

Annealing

Diffusion

Oxidation

Semiconducting wafers

Semiconductors

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