CMP is a removal process that strips small portions of film deposited on a wafer
by a combination of chemical reaction and mechanical polishing, thus making the
surface smoother and more planarized. It is also used to remove bulk dielectric
film on the surface to form STI on the silicon substrate, and remove bulk metal
film from the wafer surface to form metal interconnection lines or plugs in the
dielectric film. This chapter covers CMP processes.
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