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Chapter 12:
Chemical Mechanical Polishing
Abstract
CMP is a removal process that strips small portions of film deposited on a wafer by a combination of chemical reaction and mechanical polishing, thus making the surface smoother and more planarized. It is also used to remove bulk dielectric film on the surface to form STI on the silicon substrate, and remove bulk metal film from the wafer surface to form metal interconnection lines or plugs in the dielectric film. This chapter covers CMP processes.
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CHAPTER 12
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