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Since the initial proposal by Esaki and Tsu and the advent of MBE, the interest in semiconductor superlattices (SLs) and quantum well structures (QWs) has increased continuously over the years, driven by technological challenges, new physical concepts and phenomena, as well as promising applications. A new class of materials and heterojunctions with unique electronic and optical properties has been developed. Here we focus on devices that involve infrared excitation of carriers in quantum wells.
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