Masks and Reticles

doi:10.1117/3.2525393.ch7

Masks and Reticles

Book: Principles of Lithography, Fourth Edition

Author(s): Harry J. Levinson

Published: 2019

https://doi.org/10.1117/3.2525393.ch7

Abstract

In optical-projection lithography, the patterns on wafers are reproductions of those on photomasks. The quality of the wafer patterns, as measured by linewidth control, overlay, and defects, is strongly affected by the quality of the corresponding parameters on the masks. Linewidth variations on the reticles ultimately result in linewidth variations on the wafer. Mask-registration errors contribute to overlay errors. Defects on the reticle may result in nonworking die. Consequently, masks are critical components of lithographic technology.