Fundamentals of Infrared Detector Materials

Author(s): Michael A. Kinch

Published: 2007

PDF ISBN: 9780819478740 | Print ISBN: 9780819467317

DESCRIPTION

The choice of available infrared (IR) detectors for insertion into modern IR systems is both large and confusing. The purpose of this volume is to provide a technical database from which rational IR detector selection criteria evolve, and thus clarify the options open to the modern IR system designer. Emphasis concentrates mainly on high-performance IR systems operating in a tactical environment, although there also is discussion of both strategic environments and low- to medium-performance system requirements.

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Front Matter

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CHAPTER 1.

Introduction

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CHAPTER 2.

IR Detector Performance Criteria

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2.1 Photon Detectors
2.1.1 IR detector operating temperature
2.1.2 IR detector sensitivity
2.2 Thermal Detectors

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CHAPTER 3.

IR Detector Materials: A Technology Comparison

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3.1 Intrinsic Direct Bandgap Semiconductor
3.2 Extrinsic Semiconductor
3.3 Quantum Well IR Photodetectors (QWIPs)
3.4 Silicon Schottky Barrier Detectors
3.5 High-Temperature Superconductor
3.6 Conclusions

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CHAPTER 4.

Intrinsic Direct Bandgap Semiconductors

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4.1 Minority Carrier Lifetime
4.1.1 Radiative recombination
4.1.2 Auger recombination
4.1.3 Shockley–Read recombination
4.2 Diode Dark Current Models
4.3 Binary Compounds
4.3.1 Indium antimonide: InSb
4.4 Ternary Alloys
4.4.1 Mercury cadmium telluride: Hg1−xCdxTe
4.5 Pb1−x SnxTe
4.5.1 Minority carrier lifetime
4.5.2 Dark currents
4.6 Type III Superlattices
4.6.1 Superlattice bandstructure
4.6.2 Band offsets and strain
4.6.3 Interdiffusion in HgTe/CdTe superlattices
4.6.4 Misfit dislocations
4.6.5 Absorption coefficient
4.6.6 Effective mass
4.6.7 Minority carrier lifetime
4.7 Type II Superlattices
4.7.1 Minority carrier lifetime
4.8 Direct Bandgap Materials: Conclusions
4.8.1 HgCdTe
4.8.2 InSb
4.8.3 PbSnTe
4.8.4 Type III superlattices
4.8.5 Type II superlattices
4.8.6 Final thoughts

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CHAPTER 5.

HgCdTe: Material of Choice for Tactical Systems

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5.1 HgCdTe Material Properties
5.1.1 Material growth
5.1.2 HgCdTe annealing
5.1.3 HgCdTe properties
5.2 HgCdTe Device Architectures
5.2.1 DLHJ architecture
5.2.2 Bump-bonded ion implant architecture
5.2.3 Vertically integrated photodiode (VIP and HDVIP) architectures
5.3 ROIC Requirements
5.3.1 Detector performance: Modeling
5.3.2 Dark current in HgCdTe diodes
5.3.3 1/f noise
5.4 Detector Performance
5.5 HgCdTe: Conclusions

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CHAPTER 6.

Uncooled Detection

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6.1 Thermal Detection
6.2 Photon Detection
6.2.1 HOT detector theory
6.2.2 HOT detector data
6.2.3 HOT detector contacts
6.2.4 HOT detector options
6.3 Uncooled Photon vs. Thermal Detection Limitss
6.4 Uncooled Detection: Conclusions

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CHAPTER 7.

HgCdTe Electron Avalanche Photodiodes (EAPDs)

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7.1 McIntyre’s Avalanche Photodiode Model
7.2 Physics of HgCdTe EAPDs
7.2.1 High-energy scattering rates
7.2.2 Electron impact ionization rate in HgCdTe
7.3 Empirical Model for Electron Avalanche Gain in HgCdTe
7.4 Room-Temperature HgCdTe APD Performance
7.5 Monte Carlo Modeling
7.6 Conclusions

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CHAPTER 8.

Future HgCdTe Developments

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8.1 Dark Current Model
8.1.1 N-side
8.1.2 P-side
8.2 The Separate Absorption and Detection Diode Structure
8.3 Multicolor and Multispectral FPAs
8.4 High-Density FPAs
8.5 Low Background Operation
8.5.1 LWIR 14 m at 40 K
8.5.2 Low background operation at a cutoff of 25 m
8.6 Higher Operating Temperatures
8.6.1 High-gain APDs
8.7 Conclusion
Epilogue

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Appendix A: Mathcad Program for HgCdTe Diode Dark Current Modeling

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Back Matter

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