Errata: Viability of pattern shift for defect-free extreme ultraviolet lithography photomasks

Zhengqing J. Qi; Jed H. Rankin; Eisuke Narita; Masayuki Kagawac

doi:10.1117/1.JMM.15.2.029801

15 February 2016 Errata: Viability of pattern shift for defect-free extreme ultraviolet lithography photomasks

Zhengqing J. Qi, Jed H. Rankin, Eisuke Narita, Masayuki Kagawac

Journal of Micro/Nanolithography, MEMS, and MOEMS, Vol. 15, Issue 2, 029801 (February 2016). https://doi.org/10.1117/1.JMM.15.2.029801

This article [J. Micro/Nanolith. MEMS MOEMS 15(2), 021005 (2016)] was originally published online on 2 February 2016 with an error in the author affiliations. The correct affiliations are shown above. All online versions of the article were corrected on 3 February 2016. The article appears correctly in print.

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Zhengqing J. Qi, Jed H. Rankin, Eisuke Narita, and Masayuki Kagawac "Errata: Viability of pattern shift for defect-free extreme ultraviolet lithography photomasks," Journal of Micro/Nanolithography, MEMS, and MOEMS 15(2), 029801 (15 February 2016). https://doi.org/10.1117/1.JMM.15.2.029801

Published: 15 February 2016

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KEYWORDS

Photomasks

Extreme ultraviolet lithography

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