Studying resist performance for contact holes printing using EUV interference lithography

Xiaolong Wang; Li-Ting Tseng; Dimitrios Kazazis; Zuhal Tasdemir; Michaela Vockenhuber; Iacopo Mochi; Yasin Ekinci

doi:10.1117/1.JMM.18.1.013501

14 January 2019 Studying resist performance for contact holes printing using EUV interference lithography

Xiaolong Wang, Li-Ting Tseng, Dimitrios Kazazis, Zuhal Tasdemir, Michaela Vockenhuber, Iacopo Mochi, Yasin Ekinci

Journal of Micro/Nanolithography, MEMS, and MOEMS, Vol. 18, Issue 1, 013501 (January 2019). https://doi.org/10.1117/1.JMM.18.1.013501

Abstract

Extreme ultraviolet interference lithography (EUV-IL) is a relatively simple and inexpensive technique that can pattern high-resolution line/space and has been successfully used for the resist performance testing. While the aerial image in EUV-IL formed by two beams is straightforward to understand and has contrast of 1, the aerial image formed by four beams providing contact holes is rather complicated. The beam polarization and relative phases of the individual beams play a significant role in the aerial image formation in four-beam interference lithography. In particular, controlling the relative phase of the beams is very difficult to achieve due to short wavelength. To circumvent this problem, we propose an effective double exposure four-beam interference lithography method, by intentionally designing the grating with a slightly different pitch to create an optical path difference that is longer than the coherence length of the EUV light (13.5 nm). We numerically prove the effective double exposure four-beam interference is not sensitive to the phases difference and verify our analytical model by printing both positive tone chemically amplified resist and a negative tone inorganic resist.

Citation Download Citation

Xiaolong Wang, Li-Ting Tseng, Dimitrios Kazazis, Zuhal Tasdemir, Michaela Vockenhuber, Iacopo Mochi, and Yasin Ekinci "Studying resist performance for contact holes printing using EUV interference lithography," Journal of Micro/Nanolithography, MEMS, and MOEMS 18(1), 013501 (14 January 2019). https://doi.org/10.1117/1.JMM.18.1.013501

Received: 16 October 2018; Accepted: 14 December 2018; Published: 14 January 2019

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