1 April 2006 Oxidation resistance and microstructure of ruthenium-capped extreme ultraviolet lithography multilayers
Sasa Bajt, Zu Rong Dai, Erik J. Nelson, Mark A. Wall, Jennifer B. Alameda, Nhan Q. Nguyen, Sherry L. Baker, Jeffrey C. Robinson, John S. Taylor, Andrew L. Aquila, Nora V. Edwards
Author Affiliations +
Abstract
The oxidation resistance of protective capping layers for extreme ultraviolet lithography (EUVL) multilayers depends on their microstructure. Differently prepared Ru-capping layers, deposited on Mo/Si EUVL multilayers, are investigated to establish their baseline structural, optical, and surface properties in an as-deposited state. The same capping layer structures are then tested for their thermal stability and oxidation resistance. The best performing Ru-capping layer structure is analyzed in detail with transmission electron microscopy (TEM). Compared to other Ru-capping layer preparations studied here, it is the only one that shows grains with preferential orientation. This information is essential to model and optimize the performance of EUVL multilayers.
©(2006) Society of Photo-Optical Instrumentation Engineers (SPIE)
Sasa Bajt, Zu Rong Dai, Erik J. Nelson, Mark A. Wall, Jennifer B. Alameda, Nhan Q. Nguyen, Sherry L. Baker, Jeffrey C. Robinson, John S. Taylor, Andrew L. Aquila, and Nora V. Edwards "Oxidation resistance and microstructure of ruthenium-capped extreme ultraviolet lithography multilayers," Journal of Micro/Nanolithography, MEMS, and MOEMS 5(2), 023004 (1 April 2006). https://doi.org/10.1117/1.2201027
Published: 1 April 2006
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CITATIONS
Cited by 23 scholarly publications and 4 patents.
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KEYWORDS
Ruthenium

Silicon

Oxidation

Molybdenum

Extreme ultraviolet lithography

Reflectivity

Electrons

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