Roughness characterization in the frequency domain and linewidth roughness mitigation with post-lithography processes

Alessandro Vaglio-Pret; Roel Gronheid; Philippe Foubert

doi:10.1117/1.3494614

1 October 2010 Roughness characterization in the frequency domain and linewidth roughness mitigation with post-lithography processes

Alessandro Vaglio-Pret, Roel Gronheid, Philippe Foubert

Author Affiliations +

Journal of Micro/Nanolithography, MEMS, and MOEMS, Vol. 9, Issue 4, 041203 (October 2010). https://doi.org/10.1117/1.3494614

Abstract

A previously developed linewidth roughness analysis technique is used to characterize post-lithography process roughness reduction in the frequency domain. Post-lithography processes are likely to be required to reach the International Technology Roadmap for Semiconductors roughness specifications for the 32-nm and 22-nm technological nodes. The aim of these processes is to reduce 3 linewidth roughness after etch without dramatic changes in critical dimensions. Various techniques are discussed: in-track chemical processes, ion-beam sputtering, and thermal and plasma treatments-each technique manifests a characteristic smoothing, reducing roughness up to 34%. Exploiting roughness mitigation at different frequencies, our target is to determine whether 50% 3 linewidth roughness reduction after etch is feasible.

©(2010) Society of Photo-Optical Instrumentation Engineers (SPIE)

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Alessandro Vaglio-Pret, Roel Gronheid, and Philippe Foubert "Roughness characterization in the frequency domain and linewidth roughness mitigation with post-lithography processes," Journal of Micro/Nanolithography, MEMS, and MOEMS 9(4), 041203 (1 October 2010). https://doi.org/10.1117/1.3494614

Published: 1 October 2010

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