Fast optoelectronic responsivity of metal-oxide-semiconductor nanostructures

Aviya Bennett; Avraham R. Chelly; Avi Karsenty; Ilan Gadasi; Zvi Priel; Ya'akov M. Mandelbaum; Tiecheng Lu; Issai Shlimak; Zeev Zalevsky

doi:10.1117/1.JNP.10.036001

6 July 2016 Fast optoelectronic responsivity of metal-oxide-semiconductor nanostructures

Aviya Bennett, Avraham R. Chelly, Avi Karsenty, Ilan Gadasi, Zvi Priel, Ya'akov M. Mandelbaum, Tiecheng Lu, Issai Shlimak, Zeev Zalevsky

Author Affiliations +

Journal of Nanophotonics, Vol. 10, Issue 3, 036001 (July 2016). https://doi.org/10.1117/1.JNP.10.036001

Abstract

The frequency dependence of the capacitance variation between dark and near-infrared-modulated illumination conditions is measured for metal-oxide-semiconductor structures with germanium nanocrystals embedded in a thick SiO₂ film grown on a silicon substrate. The results have shown that the device is expected to be sensitive at high frequencies (up to 111 GHz) making it a good candidate for optoelectronic high-speed use and for optical communication applications.

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Aviya Bennett, Avraham R. Chelly, Avi Karsenty, Ilan Gadasi, Zvi Priel, Ya'akov M. Mandelbaum, Tiecheng Lu, Issai Shlimak, and Zeev Zalevsky "Fast optoelectronic responsivity of metal-oxide-semiconductor nanostructures," Journal of Nanophotonics 10(3), 036001 (6 July 2016). https://doi.org/10.1117/1.JNP.10.036001

Published: 6 July 2016

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