Luminescence enhancement of nanocrystal quantum wells by bandgap and strain engineering

Xian-An Cao; Yifei Lu

doi:10.1117/1.JNP.9.093052

16 September 2015 Luminescence enhancement of nanocrystal quantum wells by bandgap and strain engineering

Xian-An Cao, Yifei Lu

Author Affiliations +

Journal of Nanophotonics, Vol. 9, Issue 1, 093052 (September 2015). https://doi.org/10.1117/1.JNP.9.093052

Abstract

CdSe-based nanocrystal quantum wells (QWs) were synthesized around CdS nanocrystal quantum dots and were bandgap- and strain-engineered to achieve high-efficiency short-wavelength luminescence. Tuning the CdSe QW width in the range of 1.05 to 1.58 nm has led to blue-green light emission, whose quantum yield was improved up to 48% through strain compensation by an optimized ZnS outer shell. The luminescence spectrum can be modified by adding a ZnS inner barrier layer to block charge and exciton transfer between the QW and CdS core. Strain management by adjusting the well and barrier thickness has proven critical in such a complex multilayer quantum system for obtaining high-quality nanocrystals and light emission.

Citation Download Citation

Xian-An Cao and Yifei Lu "Luminescence enhancement of nanocrystal quantum wells by bandgap and strain engineering," Journal of Nanophotonics 9(1), 093052 (16 September 2015). https://doi.org/10.1117/1.JNP.9.093052

Published: 16 September 2015

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