11 September 2015 Enhancing the far-ultraviolet sensitivity of silicon complementary metal oxide semiconductor imaging arrays
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J. of Astronomical Telescopes, Instruments, and Systems, 1(4), 046001 (2015). doi:10.1117/1.JATIS.1.4.046001
Abstract
We report our progress toward optimizing backside-illuminated silicon P-type intrinsic N-type complementary metal oxide semiconductor devices developed by Teledyne Imaging Sensors (TIS) for far-ultraviolet (UV) planetary science applications. This project was motivated by initial measurements at Southwest Research Institute of the far-UV responsivity of backside-illuminated silicon PIN photodiode test structures, which revealed a promising QE in the 100 to 200 nm range. Our effort to advance the capabilities of thinned silicon wafers capitalizes on recent innovations in molecular beam epitaxy (MBE) doping processes. Key achievements to date include the following: (1) representative silicon test wafers were fabricated by TIS, and set up for MBE processing at MIT Lincoln Laboratory; (2) preliminary far-UV detector QE simulation runs were completed to aid MBE layer design; (3) detector fabrication was completed through the pre-MBE step; and (4) initial testing of the MBE doping process was performed on monitoring wafers, with detailed quality assessments.
Retherford, Bai, Ryu, Gregory, Welander, Davis, Greathouse, Winters, Suntharalingam, and Beletic: Enhancing the far-ultraviolet sensitivity of silicon complementary metal oxide semiconductor imaging arrays
Kurt D. Retherford, Yibin Bai, Kevin K. Ryu, James A. Gregory, Paul B. Welander, Michael W. Davis, Thomas K. Greathouse, Gregory S. Winters, Vyshnavi Suntharalingam, James W. Beletic, "Enhancing the far-ultraviolet sensitivity of silicon complementary metal oxide semiconductor imaging arrays," Journal of Astronomical Telescopes, Instruments, and Systems 1(4), 046001 (11 September 2015). http://dx.doi.org/10.1117/1.JATIS.1.4.046001
Submission: Received ; Accepted
JOURNAL ARTICLE
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KEYWORDS
Silicon

Semiconducting wafers

Ultraviolet radiation

Sensors

Oxides

Doping

Quantum efficiency

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