28 October 2014 Enhancing the noise performance of monolithic microwave integrated circuit-based low noise amplifiers through the use of a discrete preamplifying transistor
Author Affiliations +
Abstract
An approach to enhancing the noise performance of an InP monolithic microwave integrated circuit (MMIC)-based low noise amplifiers (LNA) through the use of a discrete 100-nm gate length InP high electron mobility transistor is outlined. This LNA, known as a transistor in front of MMIC (T + MMIC) LNA, possesses a gain in excess of 40 dB and an average noise temperature of 9.4 K across the band 27 to 33 GHz at a physical temperature of 8 K. This compares favorably with 14.5 K for an LNA containing an equivalent MMIC. A simple advanced design system model offering further insights into the operation of the LNA is also presented and the LNA is compared with the current state-of-the-art
© 2015 Society of Photo-Optical Instrumentation Engineers (SPIE)
Mark A. McCulloch, Mark A. McCulloch, Simon J. Melhuish, Simon J. Melhuish, Lucio Piccirillo, Lucio Piccirillo, } "Enhancing the noise performance of monolithic microwave integrated circuit-based low noise amplifiers through the use of a discrete preamplifying transistor," Journal of Astronomical Telescopes, Instruments, and Systems 1(1), 016001 (28 October 2014). https://doi.org/10.1117/1.JATIS.1.1.016001 . Submission:
JOURNAL ARTICLE
6 PAGES


SHARE
Back to Top