Translator Disclaimer
1 January 2011 Dark current in an active pixel complementary metal-oxide-semiconductor sensor
Author Affiliations +
We present an analysis of dark current from a complementary metal-oxide-semiconductor (CMOS) active pixels sensor with global shutter. The presence of two sources of dark current, one within the collection area of the pixel and another within the sense node, present complications to correction of the dark current. The two sources are shown to generate unique and characteristic dark current behavior with respect to varying exposure time, temperature, and/or frame rate. In particular, a pixel with storage time in the sense node will show a dark current dependence on frame rate and the appearance of being a "stuck pixel" with values independent of exposure time. On the other hand, a pixel with an impurity located within the collection area will show no frame rate dependence, but rather a linear dependence on exposure time. A method of computing dark frames based on past dark current behavior of the sensor is presented and shown to intrinsically compensate for the two different and unique sources. In addition, dark frames requiring subtraction of negative values, arising from the option to modify the bias offset, are shown to be appropriate and possible using the computational method.
©(2011) Society of Photo-Optical Instrumentation Engineers (SPIE)
Justin Dunlap, William C. Porter, Erik Bodegom, and Ralf Widenhorn "Dark current in an active pixel complementary metal-oxide-semiconductor sensor," Journal of Electronic Imaging 20(1), 013005 (1 January 2011).
Published: 1 January 2011


Focal plane technologies for LSST
Proceedings of SPIE (December 24 2002)
Testing of CMOS devices in NIF's harsh neutron environment
Proceedings of SPIE (October 15 2012)
Dark current measurements in a CMOS imager
Proceedings of SPIE (February 29 2008)
Solid state image sensor: technologies and applications
Proceedings of SPIE (June 18 1998)

Back to Top