1 July 2002 Investigation of precision grinding process for production of silicon diaphragms
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Abstract
The application of precision grinding for the formation of a silicon diaphragm is investigated. The test structures involved 2-6 mm diam diaphragms with thicknesses in the range of 25-150 μm. When grinding is performed without supporting the diaphragm, bending occurs due to nonuniform removal of the silicon material over the diaphragm region. The magnitude of bending depends on the final thickness of the diaphragm. The results demonstrate that the use of a porous silicon support can significantly reduce the amount of bending, by a factor of up to 300 in the case of 50 μm thick diaphragms. The use of silicon on insulator (SOI) technology can also suppress or eliminate bending although this may be a less economical process. Stress measurements in the diaphragms were performed using x-ray and Raman spectroscopies. The results show stress of the order of 1×107-1×108 Pa in unsupported and supported by porous silicon diaphragms while SOI technology provides stress-free diaphragms. Results obtained from finite element method analysis to determine deterioration in the performance of a 6 mm diaphragm due to bending are presented. These results show a 10% reduction in performance for a 75 μm thick diaphragm with bending amplitude of 30 μm, but negligible reduction if the bending is reduced to <10 μm.
Andrzej Prochaska, S. J. Neil Mitchell, Tatiana S. Perova, Remy Maurice, Paul T. Baine, Harold S. Gamble, "Investigation of precision grinding process for production of silicon diaphragms," Journal of Micro/Nanolithography, MEMS, and MOEMS 1(2), (1 July 2002). https://doi.org/10.1117/1.1450597
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