1 July 2002 Optimization of conductivity monitoring in micromachined silicon capillaries
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Abstract
This paper investigates the use of electrical conductivity monitoring in silicon-based capillaries and the inherent problems therein. In comparison to reference glass devices, the conductance waveforms from the silicon devices were significantly distorted. This has been shown to be due to the profiles of the ends of the capillaries where single-sided etching was employed, and the silicon dioxide capacitance. Double-sided processing provides a solution to tapering of channel inlets, by reducing the time that the front side is exposed to the KOH solution. Models are developed for the devices, which identify degradation of the oxide isolation as another source of distortion. Matching of the experimental and simulated characteristics enables an estimation of the capacitance between the silicon and the bulk solution. Silicon nitride layers are shown to provide more effective isolation and greatly reduce the distortion observed during conductivity monitoring.
Paul V. Rainey, S. J. Neil Mitchell, Harold S. Gamble, "Optimization of conductivity monitoring in micromachined silicon capillaries," Journal of Micro/Nanolithography, MEMS, and MOEMS 1(2), (1 July 2002). https://doi.org/10.1117/1.1479708
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