1 January 2011 High-resolution microfabricated Vernier-type displacement sensor using suspended gate field-effect transistors
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Abstract
In this paper, a high resolution Vernier-type displacement sensing mechanism is proposed by utilizing Vernier-type suspended gate field-effect transistors (SGFETs), The field-effect transistor benefits from its linear output signal and simple structure, and the concept of Vernier gate is used to enhance the resolution. The displacement of the comb-drive actuator is sensed via the output drain current of SGFET. Design and analysis for Vernier-type suspended gate were presented and some characteristics of the Vernier-type SGFETs were also discussed in simulation results.
© (2011) Society of Photo-Optical Instrumentation Engineers (SPIE)
Jo-Han Hsu, Max Ti-Kuang Hou, Rongshun Chen, "High-resolution microfabricated Vernier-type displacement sensor using suspended gate field-effect transistors," Journal of Micro/Nanolithography, MEMS, and MOEMS 10(1), 011502 (1 January 2011). https://doi.org/10.1117/1.3533325 . Submission:
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